RD07MVS1 transistor equivalent, silicon mosfet power transistor.
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0
Ta=+25°C Vds=10V
Sili.
OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
*High power gain: Pout>7W, Gp.
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
*High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz <.
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